K4S560432J データシートの表示（PDF） - Samsung

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K4S560432J

256Mb J-die SDRAM Specification

Samsung 

K4S560432J

K4S560832J

K4S561632J

Synchronous DRAM

8.0 Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

V

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

PD

1

W

Short circuit current

IOS

50

mA

Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

9.0 DC Operating Conditions

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)

Parameter

Symbol

Min

Typ

Max

Unit

Supply voltage

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

VDD, VDDQ

3.0

VIH

2.0

VIL

-0.3

VOH

2.4

VOL

-

ILI

-10

3.3

3.6

V

3.0

VDD+0.3

V

0

0.8

V

-

-

V

-

0.4

V

-

10

uA

Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

Note

1

2

IOH = -2mA

IOL = 2mA

3

10.0 Capacitance

Pin

Clock

RAS, CAS, WE, CS, CKE, DQM

Address

(x4 : DQ0 ~ DQ3), (x8 : DQ0 ~ DQ7), (x16 : DQ0 ~ DQ15)

(VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

Symbol

Min

CCLK

2.5

CIN

2.5

CADD

2.5

COUT

4.0

Max

3.5

3.8

3.8

6.0

Unit

pF

pF

pF

pF

8 of 15

Rev. 1.22 August 2008

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