K9LAG08U0M データシートの表示（PDF） - Samsung
部品番号
コンポーネント説明
メーカー
K9LAG08U0M Datasheet PDF : 45 Pages
| |||
K9HBG08U1M
K9LAG08U0M K9MCG08U5M
Advance
FLASH MEMORY
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
0.8
3
ms
Dummy Busy Time for Multi Plane Program
tDBSY
0.5
1
µs
Number of Partial Program Cycles in the Same Page
Nop
-
-
1
cycle
Block Erase Time
tBERS
-
1.5
10
ms
NOTE
1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
2. Typical Program time is defined as the time within which more than 50% of the whole pages are programed at 3.3V Vcc and 25°C temperature.
3. Within a block, program time(tPROG) of page group A is faster than that of page group B. Typical tPROG is the average program time of two pages of
a sampled block each from page group A and group B.
Page Group A: Page 0, Page 1, Page 4, Page 5, ... , Page 120, Page 121, Page 124, Page 125
Page Group B: Page 2, Page 3, Page 6, Page 7, ... , Page 122, Page 123, Page 126, Page 127
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
Symbol
tCLS(1)
tCLH
tCS(1)
tCH
tWP
tALS(1)
tALH
tDS(1)
tDH
tWC
tWH
tADL(2)
Min
K9MCG08U5M
K9LAG08U0M
K9HBG08U1M
25
15
10
5
35
20
10
5
25
15
25
15
10
5
20
15
10
5
45
30
15
10
70
70(2)
Max
K9LAG08U0M
K9MCG08U5M
K9HBG08U1M
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low.
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
14
Share Link: 