K9LAG08U0M データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9LAG08U0M

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Samsung 

K9HBG08U1M

K9LAG08U0M K9MCG08U5M

Advance

FLASH MEMORY

NAND Flash Technical Notes (Continued)

Error in write or read operation

Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual

data. Block replacement should be done upon erase or program error.

Write

Read

ECC

Failure Mode

Erase Failure

Program Failure

Up to Four Bit Failure

Detection and Countermeasure sequence

Status Read after Erase --> Block Replacement

Status Read after Program --> Block Replacement

Verify ECC -> ECC Correction

: Error Correcting Code --> RS Code etc.

Example) 4bit correction / 512-byte

Program Flow Chart

Start

Write 80h

Write Address

Write Data

Write 10h

Read Status Register

I/O 6 = 1 ?

No

or R/B = 1 ?

*

No

Program Error

Yes

I/O 0 = 0 ?

Yes

Program Completed

* : If program operation results in an error, map out

the block including the page in error and copy the

target data to another block.

17

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