K9HBG08U1M-P データシートの表示（PDF） - Samsung

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K9HBG08U1M-P

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Samsung 

K9HBG08U1M

K9LAG08U0M K9MCG08U5M

Document Title

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Advance

FLASH MEMORY

Revision History

Revision No History

Draft Date Remark

0.0

1. Initial issue

Feb. 1st 2005 Advance

0.1

1. AC Para. tRHW deleted

Sep. 1st 2005 Advance

2. the power recovery time of minmum is changed from 10µs to 100µs(p43)

0.2

1. DSP package is added

Nov. 25th 2005 Advance

2. The note of program/erase characteristics is changed

0.3

1. Max Icc is changed from 3.0mA to 3.5mA

Feb. 22nd 2006 Advance

0.4

1. Leaded part is eliminated.

2. tR 50us -> 60us (p. 3,15,38)

3. tRHW, tCSD parameter is defined.

4. Technical note is added.(p.19)

Mar. 21 2006 Advance

0.5

1. Endurance is changed (10K->5K)

Apr. 20th 2006 Advance

0.6

1. Max. tPROG is changed (2ms -> 3ms)

0.7

1. 38 pin of TSOP QDP package is changed (PRE->N.C)

Apr. 25th 2006 Advance

June 24th 2006 Advance

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

2

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