K9HBG08U1M-P データシートの表示（PDF） - Samsung

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K9HBG08U1M-P

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Samsung 

K9HBG08U1M

K9LAG08U0M K9MCG08U5M

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9LAG08U0M-P

K9HBG08U1M-P

K9HBG08U1M-I

K9MCG08U5M-P

Vcc Range

2.7V ~ 3.6V

Organization

X8

Advance

FLASH MEMORY

PKG Type

TSOP1

52TLGA

TSOP1-DSP

FEATURES

• Voltage Supply : 2.7 V ~ 3.6 V

• Organization

- Memory Cell Array : (2G + 64M)bit x 8bit

- Data Register : (2K + 64)bit x8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (256K + 8K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 60µs(Max.)

- Serial Access : 30ns(Min.)

*K9MCG08U5M : 50ns(Min.)

• Memory Cell : 2bit / Memory Cell

• Fast Write Cycle Time

- Program time : 800µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)

- Data Retention : 10 Years

• Command Register Operation

• Unique ID for Copyright Protection

• Package :

- K9LAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9HBG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9HBG08U1M-ICB0/IIB0

52 - Pin TLGA (12 x 17 / 1.0 mm pitch)

- K9MCG08U5M-PCB0/PIB0 : Two K9HBG08U0M package stacked

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) : Pb-FREE PACKAGE

GENERAL DESCRIPTION

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most cost-

effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte

page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out

at 30ns(K9MCG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as com-

mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and

internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LAG08U0M′s extended

reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The

K9LAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

An ultra high density solution having two 16Gb stacked with two chip selects is also available in standard TSOPI package.

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