CM150TF-12H(1998) データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM150TF-12H
(Rev.:1998)

IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM150TF-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (TC = 25°C)

Peak Collector Current

Emitter Current** (TC = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)

Mounting Torque, M5 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IR

IEM

Pc

–

Mounting Torque, M5 Mounting

–

Weight

–

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CM150TF-12H

–40 to 150

–40 to 125

600

±20

150

300*

150

300*

600

1.47 ~ 1.96

1.47 ~ 1.96

830

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

Grams

Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ. Max. Units

Collector-Cutoff Current

Gate Leakage Current

ICES

IGES

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

–

–

1.0

mA

–

–

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 15mA, VCE = 10V

4.5

6.0

7.5 Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150A, VGE = 15V

–

IC = 150A, VGE = 15V, Tj = 150°C

–

2.1

2.8** Volts

2.15 –

Volts

Total Gate Charge

QG

VCC = 300V, IC = 150A, VGE = 15V

–

450

–

nC

Emitter-Collector Voltage

VEC

IE = 150A, VGE = 0V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

–

–

2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Resistive

Turn-on Delay Time

Load

Rise Time

Switching

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Cies

Coes

Cres

td(on)

tr

td(off)

tf

trr

Qrr

–

VGE = 0V, VCE = 10V

–

–

–

VCC = 300V, IC = 150A,

–

VGE1 = VGE2 = 15V, RG = 4.2Ω

–

–

IE = 150A, diE/dt = –300A/µs

–

IE = 150A, diE/dt = –300A/µs

–

Typ.

–

–

–

–

–

–

–

–

0.41

Max.

15

5.3

3

200

550

300

300

110

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Rth(j-c)

Per IGBT

–

Rth(j-c)

Per FWDi

–

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ. Max. Units

–

0.21 °C/W

–

0.47 °C/W

–

0.025 °C/W

Sep.1998

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