SSE90N10-14 データシートの表示（PDF） - Unspecified
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SSE90N10-14 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSE90N10-14
90A , 100V , RDS(ON) 16m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
TO-220P saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
N-Channel
D2
G1
S3
TO-220P
D
C
B
E
A
R
T
S
G
F
I
H
J
K
L
U
X
M
P
N
O
V
Q
Q
W
123
REF.
A
B
C
D
E
F
G
H
I
J
K
L
Millimeter
Min. Max.
7.90 8.10
9.45 9.65
9.87 10.47
-
11.50
1.06 1.46
2.60 3.00
6.30 6.70
8.35 8.75
14.7 15.3
1.60 Typ.
1.10 1.30
1.17 1.37
REF.
M
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min. Max.
-
1.50
0.75 0.95
0.66 0.86
13.50 14.50
2.44 3.44
3.50 3.70
1.15 1.45
4.30 4.70
-
2.7
1.89 3.09
0.40 0.60
2.60 3.60
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
TC=25°C
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TC=25°C
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IS
PD
TJ, TSTG
Maximum Junction to Ambient 1
Thermal Resistance Rating
RθJA
Maximum Junction to Case
Notes:
1 Package Limited.
2 Pulse width limited by maximum junction temperature.
RθJC
Ratings
100
±20
90
240
90
300
-55~175
62.5
0.5
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
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