TIP30 データシートの表示（PDF） - Fairchild Semiconductor

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TIP30

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

VCE = -4V

10

1

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

-10000

-10

IC(MAX) (PULSE)

IC(MAX) (DC)

-1

DC

TIP30 VCEO MAX.

TIP30A VCEO MAX.

TIP30B VCEO MAX.

TIP30C VCEO MAX.

-0.1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

-10000

-1000

VBE(sat)

IC/IB = 10

-100

VCE(sat)

-10

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

-10000

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

40

35

30

25

20

15

10

5

0

0

25

50

75

100

125

150

175

200

TC[oC], CASE TEMPERATURE

Figure 4. Power Derating

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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