FS6312-71 データシートの表示（PDF） - AMI Semiconductor

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FS6312-71

Three-PLL Clock Generator IC

AMI Semiconductor 

FS6312-71

Three-PLL Clock Generator IC

AMERICAN MICROSYSTEMS, INC.

Preliminary Information

May 2000

Table 5: DC Electrical Specifications

Unless otherwise stated, VDD = 3.3V, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization data and

are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ f rom typical. Negative currents indicate current flows out of the device.

PARAMETER

SYMBOL

CONDITIONS/DESCRIPTION

MIN.

TYP. MAX. UNITS

Overall

Supply Current, Dynamic, with Loaded

Outputs

IDD

25

mA

Crystal Oscillator

Crystal Loading Capacitance

CL(xtal)

As seen by a crystal connected to XIN and

XOUT

16

pF

Clock Outputs (CLK_x)

High-Level Output Source Current *

Low-Level Output Sink Current *

Short-Circuit Output Source Current *

Short-Circuit Output Sink Current *

IOH

VO = VDD – 0.8V

IOL

VO = 0.4V

IOH

VO = 0V

IOL

VO = VDD

-21

mA

+10

mA

-30

mA

+25

mA

Table 6: AC Timing Specifications

Unless otherwise stated, VDD = 3.3V, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization data and

are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ f rom typical.

PARAMETER

SYMBOL

CONDITIONS/DESCRIPTION

MIN. TYP. MAX. UNITS

Clock Outputs (CLK_x)

Duty Cycle *

Jitter, Period (1 sigma) *

Rise Time *

Fall Time *

Ratio of high pulse width (as measured from rising

edge to next falling edge at VDD/2) to one clock period

45

55

%

tj(∆P)

From rising edge to next rising edge at VDD/2

80

ps

tr

VDDO = 3.3V; VO = 0.4V to 2.4V; CL = 10pF

1.0

ns

tf

VDDO = 3.3V; VO = 2.4V to 0.4V; CL = 10pF

1.0

ns

4

5.23.00

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