HWL34YRA データシートの表示（PDF） - Hexawave, Inc

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HWL34YRA

L-Band GaAs Power FET

Hexawave, Inc 

Features

• Low Cost GaAs Power FET

• Class A or Class AB Operation

• 14.5 dB Typical Gain at 2.4GHz

• 5V to 10V Operation

Description

The HWL34YRA is a Power GaAs FET designed for

various L-band & S-band applications. It is presently

offered in low cost ceramic package.

Absolute Maximum Ratings

VDS

VGS

ID

IG

TCH

TSTG

PT*

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Channel Temperature

Storage Temperature

Power Dissipation

* mounted on an infinite heat sink.

+15V

-5V

IDSS

6mA

175°C

-65 to +175°C

12W

HWL34YRA

L-Band GaAs Power FET

Autumn 2002 V1

Outline Dimensions

RA Package (Ceramic)

Electrical Specifications (TA=25°C) f =2400 MHz for all RF Tests

Symbol

IDSS

VP

gm

Rth

P1dB

G1dB

PAE

Parameters & Conditions

Saturated Current at VDS=3V, VGS=0V

Pinch-off Voltage at VDS=3V, ID=60mA

Transconductance at VDS=3V, ID=600mA

Thermal Resistance

Power Output at Test Points

VDS=10V, ID= 0.5Idss

Gain at 1dB Compression Point

VDS=10V, ID= 0.5Idss

Power-Added Efficiency (Pout = P1dB)

VDS=10V, ID= 0.5Idss

Units

mA

V

mS

°C/W

dBm

dB

%

Min.

900

-3.5

-

-

33

13.5

35

Typ.

1200

-2.0

700

9

34

14.5

45

Max.

1600

-1.5

-

12

-

-

-

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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