HWL26NPA データシートの表示（PDF） - Hexawave, Inc
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HWL26NPA Datasheet PDF : 2 Pages
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Features
• Plastic Packaged GaAs Power FET
• Suitable for Commercial Wireless Applications
• High Efficiency
• 3V to 6V Operation
Description
The HWL26NPA is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications. It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
HWL26NPA
L-Band GaAs POWER FET
Autumn 2002 V1
Outline Dimensions
1
213
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage +7V
VGS Gate to Source Voltage -5V
ID Drain Current
IDSS
IG Gate Current
1mA
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Power Dissipation
150°C
-65 to +150°C
2W
PA Package (SOT-89)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
IDSS
VP
gm
Rth
P1dB
G1dB
PAE
Parameters & Conditions
Saturated Current at VDS=5V, VGS=0V
Pinch-off Voltage at VDS=5V, ID=11mA
Transconductance at VDS=5V, ID=110mA
Thermal Resistance
Power Output at Test Points
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
180
-3.5
-
-
21.0
23.0
9
10
Typ.
220
-2.0
120
62.5
21.5
24.5
10.0
11.0
40.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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