SB120S データシートの表示（PDF） - Micro Electro Magnetical Tech

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SB120S

20 V 1 A Standard VF Single Anode

Micro Electro Magnetical Tech 

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION

General Description: 20 V 1 A Standard VF

TYPE: SB120S

Single Anode

ELECTRICAL CHARACTERISTICS

DC Blocking Voltage: Ir=1mA(for wafer form)

Ir=0.5mA (for dice form)

Average Rectified Forward Current

Maximum Instantaneous Forward Voltage

@ 1 Amperes, Ta=25oc

SYM

VRRM

IFAV

VF MAX

Spec. Limit

20

1

0.45

Maximum Instantaneous Reverse Voltage

VR= 20 Volt, Ta=25oc

IR MAX

0.1

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

Operating Junction Temperature

Storage Temperatures

Cj MAX

IFSM

Tj

TSTG

25

-65 to +125

-65 to +125

Specification apply to die only. Actual performance may degrade when assembled.

MEMT does not guarantee device performance after assembly.

Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

Die Sort UNIT

22.5 Volt

Amp

0.44 Volt

0.09 mA

pF

Amp

oc

oc

A

C

B

Top-side Metal

SiO2 Passivation

D

P+ Guard Ring

Back-side Metal

DIM

ITEM

um2 Mil2

A Die Size

914 35.98

B Top Metal Pad Size

814 32.0

C Passivation Seal

834 32.8

D Thickness (Min)

254

10

Thickness (Max)

305

12

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

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