DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

100BGQ015(2011) データシートの表示(PDF) - Vishay Semiconductors

部品番号
コンポーネント説明
メーカー
100BGQ015
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
100BGQ015 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
130
120
110
100
DC
90
80
70
Square wave (D=0.50)
60 5V applied
50 see note (1)
40
0 20 40 60 80 100 120 140 160
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10000
VS-100BGQ015
Vishay Semiconductors
80
180°
70 120°
90°
60
60°
30°
50
RMS Limit
40
DC
30
20
10
0
0
30 60 90 120 150
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current
monitor
L
IRFP460
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 5 V
Revision: 15-Jun-11
4
Document Number: 94578
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]