1N5221B データシートの表示（PDF） - Gaomi Xinghe Electronics Co., Ltd.

部品番号

コンポーネント説明

メーカー

1N5221B

Silicon Z–Diodes y

Gaomi Xinghe Electronics Co., Ltd. 

星合电子

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

1N5221B...1N5267B

Vishay Telefunken

Silicon Z–Diodes

Features

D Very sharp reverse characteristic

D Very high stability

D Low reverse current level

D VZ–tolerance ± 5%

Applications

94 9367

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C

Parameter

Power dissipation

Z–current

Test Conditions

x TL 75°C

Junction temperature

Storage temperature range

Type

Symbol Value Unit

PV

500

mW

IZ

PV/VZ

mA

Tj

200

°C

Tstg –65...+200 °C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Junction ambient

l=9.5mm (3/8”), TL=constant

Symbol

Value

Unit

RthJA

300

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

IF=200mA

Type

Symbol Min Typ Max Unit

VF

1.1 V

Dimensions in mm

technical drawings

according to DIN

specifications

94 9366

∅ 1.7 max.

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

Weight max. 0.3 g

Cathode Identification

26 min.

1

3.9 max.

∅ 0.55 max.

26 min.

ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　　　　　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　　ＴＥＬ：０５３６－２２１０３５９

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