1N60G-AA3-R データシートの表示（PDF） - Unisonic Technologies

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1N60G-AA3-R

1.2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

UNISONIC TECHNOLOGIES CO., LTD

1N60

1.2A, 600V N-CHANNEL

POWER MOSFET

 DESCRIPTION

The UTC 1N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.

 FEATURES

* RDS(ON) < 11.5Ω @ VGS=10V, ID=0.6A

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

 SYMBOL

Power MOSFET

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