28C011TRTFB12 データシートの表示（PDF） - MAXWELL TECHNOLOGIES
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28C011TRTFB12 Datasheet PDF : 19 Pages
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1 Megabit (128K x 8-Bit) EEPROM
28C011T
PARAMETER
TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
SYMBOL
SUBGROUPS
MIN
MAX
UNITS
Output Enable Access Time
CE = VIL, WE = VIH
-120
-150
-200
tOE
9, 10, 11
0
0
0
ns
75
75
100
Output Hold to Address Change
CE = OE = VIL, WE = VIH
-120
-150
-200
Output Disable to High-Z 2
CE = VIL, WE = VIH
-120
-150
-200
CE = OE = VIL, WE = VIH
-120
-150
-200
RES to Output Delay3
CE = OE = VIL, WE = VIH
-120
-150
-200
tOH
9, 10, 11
0
0
0
9, 10, 11
tDF
0
0
0
ns
--
--
--
ns
50
50
60
tDFR
0
0
0
tRR
9, 10, 11
300
350
450
ns
--
400
--
450
--
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL SUBGROUPS
MIN 1
MAX
UNITS
Address Setup Time
-120
-150
-200
tAS
9, 10, 11
ns
0
--
0
--
0
--
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
tCS
9, 10, 11
0
--
ns
0
--
0
--
11.10.03 REV 10
All data sheets are subject to change without notice 4
©2003 Maxwell Technologies
All rights reserved.
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