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2N6275 データシートの表示(PDF) - ON Semiconductor

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コンポーネント説明
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2N6275
ONSEMI
ON Semiconductor ONSEMI
2N6275 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2N6274 2N6275 2N6277
100
50
20 TJ = 200°C dc 5.0 ms
10
5.0
1.0 ms 100 µs
2.0
1.0
0.5
SECOND BREAKDOWN LIMITED
0.2
BONDING WIRE LIMITED
0.1
0.05
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE) 2N6274
0.02
CURVES APPLY BELOW
2N6275
RATED V(BR)CEO
2N6277
0.012.0 3.0 5.0 7.0 10
20 30 50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
3.0
2.0
ts
1.0
0.7
0.5
0.3
tf @ VCC = 80 V
0.2
IB1 = IB2
IC/IB = 10
TJ = 25°C
0.1
0.07
0.050.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
10,000
7000
5000
3000
2000
TJ = 25°C
Cib
1000
700
500
300
Cob
200
100
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
http://onsemi.com
5

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