2SA921 データシートの表示（PDF） - Panasonic Corporation
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2SA921 Datasheet PDF : 3 Pages
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Transistors
2SA0921 (2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−120
V
Collector-emitter voltage (Base open) VCEO
−120
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−20
mA
Peak collector current
ICP
−50
mA
Collector power dissipation
PC
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−120
V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−120
V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
−100 nA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
−1
µA
Forward current transfer ratio *
hFE VCE = −5 V, IC = −2 mA
180
700
Collector-emitter saturation voltage
VCE(sat) IC = −20 mA, IB = −2 mA
− 0.6 V
Transition frequency
fT
VCB = −5 V, IE = 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV VCE = −40 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00007BED
1
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