B900 データシートの表示（PDF） - SavantIC Semiconductor

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B900

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB900

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

VBE

Base-emitter on voltage

IC=-2A ; VCE=-4V

ICBO

Collector cut-off current

VCB=-50V; IE=0

ICEO

Collector cut-off current

VCE=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-4V

MIN TYP. MAX UNIT

-50

V

-50

V

-5

V

-1.0

V

-1.4

V

-0.1 mA

-1.0 mA

-0.1 mA

40

2

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