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2SC1509 データシートの表示(PDF) - Panasonic Corporation

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2SC1509
Panasonic
Panasonic Corporation Panasonic
2SC1509 Datasheet PDF : 3 Pages
1 2 3
Transistors
2SC1509
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0777 (2SA777)
5.9±0.2
Unit: mm
4.9±0.2
Features
High collector-emitter voltage (Base open) VCEO
Optimum for the driver stage of a low-frequency and 25 W to 30
0.7±0.1
W output amplifier
Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
80
V
c type Collector-emitter voltage (Base open) VCEO
80
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
5
V
le sta ntinu Collector current
IC
0.5
A
a e cyc isco Peak collector current
ICP
1
A
life d, d Collector power dissipation
PC
750
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg 55 to +150 °C
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
in n es follopwlianngefdoudriscontin Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Collector-emitter voltage (Base open)
M is iscon ainte Emitter-base voltage (Collector open)
e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Forward current transfer ratio
Maintentenance Collector-emitter saturation voltage
main Base-emitter saturation voltage
ned Transition frequency
(pla Collector output capacitance
VCBO
VCEO
VEBO
ICBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IC = 10 µA, IE = 0
80
IC = 100 µA, IB = 0
80
IE = 10 µA, IC = 0
5
VCB = 20 V, IE = 0
VCE = 10 V, IC = 150 mA
130
VCE = 5 V, IC = 500 mA
50
IC = 300 mA, IB = 30 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1
330
100
0.2 0.4
0.85 1.2
120
11 20
Unit
V
V
V
µA
V
V
MHz
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 220 185 to 330
Publication date: November 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00106BED
1

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