C2022 データシートの表示（PDF） - SavantIC Semiconductor

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C2022

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA

ICBO

Collector cut-off current

VCB=300V ;IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=200m A ; VCE=4V

fT

Transition frequency

IC=100mA ; VCE=12V

Product Specification

2SC2022

MIN TYP. MAX UNIT

300

V

300

V

6

V

1.0

V

1.0

mA

1.0

mA

30

10

MHz

2

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