C3358 データシートの表示（PDF） - Unisonic Technologies
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C3358 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320
• 1 watts amplifier applications.
• Complementary to 2SA950
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
VCE = 1 V, IC = 100 mA
(Note)
hFE (2) VCE = 1 V, IC = 700 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE
VCE = 1 V, IC = 10 mA
fT
VCE = 5 V, IC = 10 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
30
⎯
⎯
V
100
⎯
320
35
⎯
⎯
⎯
⎯
0.5
V
0.5
⎯
0.8
V
⎯ 120 ⎯ MHz
⎯
13
⎯
pF
1
2007-11-01
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