2SC5363 データシートの表示（PDF） - Panasonic Corporation
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2SC5363 Datasheet PDF : 3 Pages
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Transistor
2SC5363(Tentative)
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
s Features
q High transition frequency fT.
q Small collector output capacitance Cob.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
9
V
Collector to emitter voltage VCEO
6
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
30
mA
Collector power dissipation PC
125
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
–55 ~ +125
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 3Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
Symbol
ICBO
IEBO
hFE
Cob
fT
| S21e |2
NF
Conditions
VCB = 5V, IE = 0
VEB = 1V, IC = 0
VCE = 3V, IC = 10mA
VCB = 3V, IE = 0, f = 1MHz
VCE = 3V, IC = 10mA, f = 1.5GHz
VCE = 0.3V, IC = 1mA, f = 0.9GHz
VCE = 0.3V, IC = 1mA, f = 0.9GHz
min
typ
max Unit
1
µA
1
µA
40
100 200
0.4
0.7
pF
10
GHz
6.5
dB
1.7
dB
1
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