D1439 データシートの表示（PDF） - Inchange Semiconductor

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D1439

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1439

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 500mA; IC= 0

5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB= 0.75A

hFE

DC Current Gain

IC= 2A ; VCE= 10V

ICBO

Collector Cutoff Current

VCB= 750V; IE= 0

VCB= 1500V; IE= 0

5.0

V

1.5

V

4

12

50 μA

1.0 mA

VECF

C-E Diode Forward Voltage

IF= 2A

2.2

V

fT

Transition Frequency

IC= 0.5A ; VCE= 10V

2

MHz

Switching Times

ts

Storage Time

tf

Fall Time

IC= 2A; IB= 0.75A; Lleak= 5μH

7

μs

0.75 μs

isc Website：www.iscsemi.cn

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