2SD2300 データシートの表示（PDF） - Inchange Semiconductor

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2SD2300

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=350mA , IC=0

VCE(sat) Collector-emitter saturation voltage IC=4.5A ; IB=1.2A

VBE(sat) Base-emitter saturation voltage

IC=4.5A ; IB=1.2A

ICES

Collector cut-off current

VCE=1500V; RBE=0

hFE

DC current gain

tf

Fall time

IC=1A ; VCE=5V

IC=4A ; IB1=0.8A; IB2≈-1.5A

VF

Diode forward voltage

IF=6A

Product Specification

2SD2300

MIN TYP. MAX UNIT

6

V

5.0

V

1.5

V

500 μA

20

1.0 μs

3.0

V

2

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