2SK3134S データシートの表示（PDF） - Renesas Electronics

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2SK3134S

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3134(L), 2SK3134(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 4 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1066-0400

(Previous: ADE-208-721B)

Rev.4.00

Sep 07, 2005

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

4

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

4

D

12

3

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.4.00 Sep 07, 2005 page 1 of 8

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