2SK975 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SK975

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK975

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch

Tch

Tstg

Ratings

Unit

60

V

±20

V

1.5

A

4.5

A

1.5

A

900

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

V(BR)DSS 60

—

voltage

Gate to source breakdown

voltage

V(BR)GSS ±20

—

Gate to source leak current

I GSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off) 1.0

—

Static drain to source on state RDS(off) —

0.3

resistance

0.4

Forward transfer admittance |yfs|

0.9

1.5

Input capacitance

Ciss —

140

Output capacitance

Coss —

70

Reverse transfer capacitance Crss —

20

Turn-on delay time

t d(on)

—

3

Rise time

tr

—

12

Turn-off delay time

t d(off)

—

50

Fall time

tf

—

30

Body to drain diode forward VDF

—

0.9

voltage

Body to drain diode reverse trr

recovery time

—

45

Note: 1. Pulse test

Max

—

—

±10

100

2.0

0.4

0.55

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 1 A, VGS = 10 V *1

ID = 1 A, VGS = 4 V *1

ID = 1 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 1 A, VGS = 10 V,

RL = 30 Ω

IF = 1.5 A, VGS = 0

IF = 1.5 A, VGS = 0,

diF/dt = 50 A/µs

2

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