5N90(2010) データシートの表示（PDF） - Unisonic Technologies
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5N90 Datasheet PDF : 6 Pages
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5N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IGSS
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=2.5A
Forward Transconductance
DYNAMIC PARAMETERS
gFS VDS=50V, ID=2.5A (Note 4)
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=720V, VGS=10V, ID=5A
(Note 4,5)
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=450V, ID=5A, RG=25Ω
(Note 4,5)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =5A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
VGS=0V, IS=5.4A,
QRR dIF/dt=100A/μs (Note 4)
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=52.8mH, IAS=5A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
MIN TYP MAX UNIT
900
V
1.0
V/°C
10 µA
100 µA
100 nA
-100 nA
3.0
5.0 V
1.8 2.3 Ω
4.0
S
1200 1550 pF
110 145 pF
13 17 pF
31 40 nC
7.2
nC
15
nC
28 65 ns
65 140 ns
65 140 ns
50 110 ns
5
A
12 A
1.4 V
610
ns
5.26
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-499.a
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