AH215-S8 データシートの表示（PDF） - Unspecified
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AH215-S8 Datasheet PDF : 6 Pages
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AH215
1 Watt, High Linearity HBT Amplifier
The Communications Edge TM
Product Information
Product Features
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• Single Positive Supply (+5 V)
• SOIC-8 SMT Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
• Defense / Homeland Security
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
1
8
2
7
3
6
4
5
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications (1)
Parameters
Units Min
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc (3)
Device Voltage, Vcc
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
mA
V
10
+29
+43.8
400
Typ
2140
11
18
8
+31.5
+45
6.3
+26
+23
450
5
Max
500
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V, Frequency = 2140 MHz in a
tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Typical Performance (4)
Parameters
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1960 2140
18
12
11
-13
-11
-18
-7
-10
-8
+31 +32 +31.5
+46 +46 +45
+25.5 +25.5
+23
7.0
5.5
6.2
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at+25° C.
Absolute Maximum Rating
Ordering Information
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85 °C
-65 to +150 °C
+26 dBm
+8 V
900 mA
5W
Part No.
AH215-S8
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
Description
1 Watt, High Linearity InGaP HBT Amplifier
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com
July 2004
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