AOP600 データシートの表示（PDF） - Alpha and Omega Semiconductor

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AOP600

Complementary Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AOP600

p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS

IDSS

IGSS

VGS(th)

ID(ON)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

RDS(ON) Static Drain-Source On-Resistance

ID=-250µA, VGS=0V

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

VDS=VGS ID=-250µA

VGS=-10V, VDS=-5V

VGS=-10V, ID=-6.6A

-30

TJ=55°C

-1.2

30

TJ=125°C

VGS=-4.5V, ID=-5A

gFS

Forward Transconductance

VDS=-5V, ID=-6.6A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=-10V, VDS=-15V, ID=-6.6A

VGS=-10V, VDS=-15V, RL=2.3Ω,

RGEN=3Ω

IF=-6.6A, dI/dt=100A/µs

IF=-6.6A, dI/dt=100A/µs

Typ Max Units

V

-1

µA

-5

±100 nA

-2 -2.4 V

A

28

35

mΩ

37

45

44

58 mΩ

13

S

-0.76 -1

V

-4.2 A

920 1100 pF

190

pF

122

pF

3.6 4.4

Ω

18.5 22.2 nC

9.6 11.6 nC

2.7

nC

4.5

nC

7.7

ns

5.7

ns

20.2

ns

9.5

ns

20

24

ns

8.8

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

value in any egniveanppalpicpalticioantiodnepdeenpdesndosn othnethueseurs'sers'psescpifeicibficoabrodadrdesdigensi.gTnh. eThceurcreunrrternattirnagtinisgbisasbeadseodn othnetht e t≤ 1≤0s10thsetrhmearml raelsrisetsaisntcaence

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4 : Sept 2005

Alpha & Omega Semiconductor, Ltd.

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