AS58C1001(2001) データシートの表示（PDF） - Austin Semiconductor
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AS58C1001 Datasheet PDF : 19 Pages
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Austin Semiconductor, Inc.
EEPROM
AS58C1001
AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE
WRITE OPERATIONS
PARAMETER
Address Setup Time
Chip Enable to Write Setup Time
Write Pulse Width
Address Hold Time
Data Setup Time
Data Hold Time
Chip Enable Hold Time
Out Enable to Write Setup Time
Output Enable Hold Time
Write Cycle Time
Byte Load Window
Time to Device Busy
RES\ to Write Setup Time
Vcc to RES\ Setup Time
SYMBOL
tAS
tCS7
tCW8
tWP7
tAH
tDS
tDH
tCH7
tOES
tOEH
tWC
tBL
tDB
tRP
tRES10
MIN
0
0
250
250
150
100
10
0
0
0
10
100
120
100
1
MAX UNITS
---
ns
---
ns
---
ns
---
ns
---
ns
---
ns
---
ns
---
ns
---
ns
---
ns
---
ms
---
µs
---
ns
---
µs
---
µs
AC TEST CONDITIONS
Input Pulse Levels............................................0V to 3V
Input Rise and Fall Times....................................<20ns
Input Timing Reference Level................................1.5V
Output Reference Level..........................................1.5V
Output Load................................................See Figure 1
Q
100pF
1 TTL GATE EQ.
Figure 1
OUTPUT LOAD EQUIVALENT
NOTES:
1. Relative to Vss
2. VIN min = -3.0V for pulse widths <50ns
3. VIL min = -1.0V for pulse widths <50ns
4. IIL on RES\ = 100ua MAX
5. tOF is defined as the time at which E the output becomes and
open circuit and data is no longer driven.
6. Use this device in longer cycle than this value
7. WE\ controlled operation
8. CE\ controlled operation
9. RES\ pin VIH is VH
10. Reference only, not tested
AS58C1001
Rev. 4.0 3/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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