BAS16TT1G データシートの表示（PDF） - ON Semiconductor

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BAS16TT1G

Silicon Switching Diode

ON Semiconductor 

1 ns MAX

10%

90%

VF

100 ns

BAS16TT1

t

trr

tif

Irr

500 W

DUT

50 W

DUTY CYCLE = 2%

Figure 1. Reverse Recovery Time Equivalent Test Circuit

20 ns MAX

10%

90%

Vf

400 ns

VC

VCM

t

VCM

+

Qa

C

500 W DUT

OSCILLOSCOPE

R . 10 MW

C 3 7 pF

BAW62

D1

243 pF

100 KW

DUTY CYCLE = 2%

t

Figure 2. Stored Charge Equivalent Test Circuit

V

90%

10%

120 ns

V

1 KW

450 W

Vfr

DUT

50 W

t

2 ns MAX

DUTY CYCLE = 2%

Figure 3. Forward Recovery Voltage Equivalent Test Circuit

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