BAS21DW5T1(2007) データシートの表示（PDF） - ON Semiconductor
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BAS21DW5T1 Datasheet PDF : 6 Pages
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BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
−55 to +150
Symbol
PD
RqJA
TJmax
TJ, Tstg
Max
385
328
3.0
150
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
mW
°C/W
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
IR
BAS19
−
BAS20
−
BAS21
−
BAS19
−
BAS20
−
BAS21
−
Reverse Breakdown Voltage
(IBR = 100 mAdc)
(IBR = 100 mAdc)
(IBR = 100 mAdc)
V(BR)
BAS19
120
BAS20
200
BAS21
250
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
−
−
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
Max
Unit
mAdc
0.1
0.1
0.1
100
100
100
Vdc
−
−
−
Vdc
1.0
1.25
5.0
pF
50
ns
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