BAS21LT1G(2007) データシートの表示（PDF） - ON Semiconductor

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BAS21LT1G
(Rev.:2007)

High Voltage Switching Diode

ON Semiconductor 

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

PACKAGE DIMENSIONS

E

A

A1

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

D

3

1

2

e

SEE VIEW C

HE

b

c

0.25

q

L

L1

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

MILLIMETERS

DIM MIN NOM MAX

A 0.89

1.00

1.11

A1 0.01

0.06

0.10

b

0.37

0.44

0.50

c

0.09

0.13

0.18

D 2.80

2.90

3.04

E 1.20

1.30

1.40

e

1.78

1.90

2.04

L 0.10

0.20

0.30

L1 0.35

0.54

0.69

H E 2.10

2.40

2.64

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

MIN

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

0.083

INCHES

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

0.094

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.104

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

ǒ Ǔ SCALE 10:1

mm

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

5

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