BAV99RW(2017) データシートの表示（PDF） - ON Semiconductor
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BAV99RW Datasheet PDF : 4 Pages
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BAV99W, BAV99RW
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
200
1.6
625
300
2.4
417
−65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
Vdc
100
−
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
IR
mAdc
−
1.0
−
30
−
50
CD
pF
−
1.5
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W
VF
mVdc
−
715
−
855
−
1000
−
1250
trr
ns
−
6.0
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
VFR
V
−
1.75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
t
IF
10%
trr
t
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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