BAW79 データシートの表示（PDF） - Infineon Technologies

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BAW79

Silicon Switching Diodes

Infineon Technologies 

BAW78.../BAW79...

1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

V(BR)

400

-

-V

I(BR) = 100 µA

Reverse current

IR

-

-

µA

VR = 400 V

-

-

1

VR = 400 V, TA = 150 °C

50

Forward voltage

IF = 1 A

IF = 2 A

VF

V

-

-

1.6

-

-

2

AC Characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

CT

-

10

- pF

Reverse recovery time

trr

IF = 200mA, IR = 200mA, measured at IR = 20mA

RL = 100

-

1

,

- µs

Test circuit for reverse recovery time

D.U.T.

ΙF

Oscillograph

EHN00019

Puls generator: tp = 10µs, D = 0.05,

tr = 0.6ns, Ri = 50

Oscillograp: R = 50 , tr = 0.35ns

C  1pF

2

Feb-03-2003

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