BC847CDXV6T1 データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
BC847CDXV6T1 Datasheet PDF : 6 Pages
| |||
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CEO
V
45
-
-
30
-
-
Collector - Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CES
V
50
-
-
30
-
-
Collector - Base Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CBO
V
50
-
-
30
-
-
Emitter - Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)EBO
V
6.0
-
-
5.0
-
-
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
-
-
-
15
nA
-
5.0
µA
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
-
-
270
-
420
520
800
VCE(sat)
-
-
-
0.25
V
-
0.6
Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL- SIGNAL CHARACTERISTICS
VBE(sat)
-
0.7
-
V
-
0.9
-
VBE(on)
580
660
700
mV
-
-
770
Current - Gain - Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz)
fT
100
-
Cobo
-
-
NF
-
-
-
MHz
4.5
pF
dB
10
http://onsemi.com
2
Share Link: 