BD177 データシートの表示（PDF） - Inchange Semiconductor
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BD177 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD175 BD177 BD179
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD175
BD177 IC=0.1A; IB=0
BD179
BD175 VCB=45V; IE=0
ICBO
Collector cut-off current BD177 VCB=60V; IE=0
BD179 VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=150mA ; VCE=2V
hFE-2
DC current gain
IC=1A ; VCE=2V
fT
Transition frequency
IC=250mA; VCE=10V
hFE-1 Classifications
6
10
40-100
63-160
16
100-250
MIN TYP. MAX UNIT
0.8
V
1.3
V
45
60
V
80
100 μA
1
mA
40
250
15
3
MHz
※ classification 16 :only BD175
2
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