BF994 データシートの表示（PDF） - Siemens AG

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BF994

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 994 S

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

AC Characteristics

Forward transconductance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz

Gate 1 input capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Gate 2 input capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Feedback capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Output capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Power gain

VDS = 15 V, ID = 10 mA

f = 200 MHz, GG = 2 mS, GL = 0.5 mS

(test circuit)

Noise figure

VDS = 15 V, ID = 10 mA

f = 200 MHz, GG = 2 mS, GL = 0.5 mS

(test circuit)

Gain control range

VDS = 15 V, VG2S = 4 … – 2 V, f = 200 MHz

(test circuit)

Symbol

Values

Unit

min. typ. max.

gfs

15

18

–

mS

Cg1ss

–

2.5 –

pF

Cg2ss

–

1.2 –

Cdg1

–

25 –

fF

Cdss

–

1

–

pF

Gps

–

25 –

dB

F

–

1

–

∆ Gps

50

–

–

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