BGA2001 データシートの表示（PDF） - Philips Electronics

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BGA2001

Silicon MMIC amplifier

Philips Electronics 

Philips Semiconductors

Silicon MMIC amplifier

Product specification

BGA2001

FEATURES

• Low current, low voltage

• Very high power gain

• Low noise figure

• Integrated temperature compensated biasing

• Supply and RF output pin combined.

PINNING

PIN

1

2

3

4

DESCRIPTION

GND

RF in

GND

VS + RFout

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors

• Low noise amplifiers

• Satellite television tuners (SATV)

• High frequency oscillators.

handbook, halfpage

3

2

Top view

VS+RFout

4

BIAS

CIRCUIT

1

MAM430

RFin

GND

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double

polysilicon transistor with integrated biasing for low voltage

applications in a plastic, 4-pin dual-emitter SOT343R

package.

Marking code: A1.

Fig.1 Simplified outline (SOT343R) and symbol.

QUICK REFERENCE DATA

SYMBOL

VS

IS

MSG

PARAMETER

DC supply voltage

DC supply current

maximum stable gain

NF

noise figure

CONDITIONS

RF input AC coupled

VVS-OUT = 2.5 V; RF input AC coupled

VVS-OUT = 2.5 V; f = 1.8 GHz;

Tamb = 25 °C

VVS-OUT = 2.5 V; f = 1.8 GHz; ΓS = Γopt

TYP.

−

4.5

19.5

1.3

MAX.

4.5

−

−

UNIT

V

mA

dB

−

dB

1999 Aug 11

2

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