BGA416(2002) データシートの表示（PDF） - Infineon Technologies

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BGA416
(Rev.:2002)

RF Cascode Amplifier

Infineon Technologies 

RF Cascode Amplifier

BGA416

Features

• GMA = 23dB at 900MHz

• Ultra high reverse isolation,

62 dB at 900MHz

• Low noise figure,

F50Ω = 1.3dB at 900MHz

• On chip bias circuitry,

5.5 mA bias current at VCC = 3V

• Typical supply voltage: 2.5 to 5.0V

• SIEGET®-25 technology

Applications

• Buffer amplifiers

• LNAs

• Oscillator active devices

GND, 1

Bias

3

4

2

1 VPS05178

Description

BGA416 is a monolithic silicon cascode

amplifier with high reverse isolation. A

bias network is integrated for simplified

biasing.

RFout, 4

RFin, 2

GND, 3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BGA416

Package

SOT143

Marking

C1s

Chip

T0553

Data sheet

4

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