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BGA416 データシートの表示(PDF) - Infineon Technologies

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BGA416
Infineon
Infineon Technologies Infineon
BGA416 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BGA416
Electrical Characteristics
Maximum Ratings
Table 1 Maximum ratings
Parameter
Symbol
Voltage at pin RFout
Device current1)
VOUT
ID
Current into pin RFin
Iin
Input power
Pin
Total power dissipation, TS < 123°C2) Ptot
Junction temperature
TJ
Ambient temperature range
TA
Storage temperature range
TSTG
1) Device current is equal to current into pin RFout
2) TS is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Limit Value
6
20
0.5
8
100
150
-65... 150
-65... 150
Thermal resistance
Table 2 Thermal resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
270
1) For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mA
dBm
mW
°C
°C
°C
Unit
K/W
2
Electrical Characteristics
Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2)
VCC = 3 V, unless otherwise specified
Table 3 Electrical Characteristics
Parameter
Symbol
Maximum available power gain
GMA
Min.
Insertion power gain
|S21|2
Reverse isolation
|S12|
Noise figure (ZS = 50 Ω)
F50
Output power at 1 dB gain
compression (ZS = ZL = 50 )
Output third order intercept point
(ZS = ZL = 50 )
Device current
P-1dB
OIP3
ID
Values
Typ.
23
14
17
11
60
40
1.2
1.6
-3
-3
14
14
5.5
Max.
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
mA
Note /
Test Condition
f = 0.9 GHz
f = 1.8 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 0.9 GHz
f = 1.8 GHz
Data Sheet
5
Rev. 2.1, 2008-04-21

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