BS250 データシートの表示（PDF） - General Semiconductor

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BS250

DMOS Transistors (P-Channel)

General Semiconductor 

TO-92

.181 (4.6)

BS250

DMOS Transistors (P-Channel)

.142 (3.6)

FEATURES

♦ High input impedance

♦ High-speed switching

♦ No minority carrier storage time

♦ CMOS logic compatible input

♦ No thermal runaway

♦ No secondary breakdown

max.∅ .022 (0.55)

.098 (2.5)

D

S

G

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

On special request, this transistor is also manufactured

in the pin configuration TO-18.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Value

Unit

Drain-Source Voltage

–VDSS

60

V

Drain-Gate Voltage

–VDGS

60

V

Gate-Source Voltage (pulsed)

VGS

± 20

V

Drain Current (continuous)

–ID

250

mA

Power Dissipation at Tamb = 25 °C

Ptot

0.831)

W

Junction Temperature

Tj

150

°C

Storage Temperature Range

TS

–65 to +150

°C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Inverse Diode

Max. Forward Current (continuous)

at Tamb = 25 °C

Forward Voltage Drop (typ.)

at VGS = 0, IF = 0.12 A, Tj = 25 °C

Symbol

Value

Unit

IF

0.3

A

VF

0.85

V

4/98

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