BS250 データシートの表示（PDF） - General Semiconductor

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BS250

DMOS Transistors (P-Channel)

General Semiconductor 

BS250

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at –ID = 100 µA, VGS = 0

–V(BR)DSS 60

70

–

V

Gate Threshold Voltage

at VGS = VDS, –ID = 1 mA

–VGS (th)

1.0

2.0

3.0

V

Gate-Body Leakage Current

at –VGS = 15 V, VDS = 0

–IGSS

–

–

20

nA

Drain Cutoff Current at –VDS = 25 V, VGS = 0

–IDSS

–

–

0.5

µA

Drain-Source ON Resistance

at –VGS = 10 V, –ID = 0.2 A

RDS (ON)

–

3.5

5.0

Ω

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

K/W

Forward Transconductance

at –VDS = 10 V, –ID = 0.2 A, f = 1 MHz

Input Capacitance

at –VDS = 10 V, VGS = 0, f = 1 MHz

gm

–

150

–

mS

Ciss

–

60

–

pF

Switching Times

at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

–

5

–

ns

toff

–

25

–

ns

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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