C67070-A2515-A67 データシートの表示（PDF） - Siemens AG

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C67070-A2515-A67

IGBT Power Module

Siemens AG 

BSM50GD60DN2E3226

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 1 mA

Collector-emitter saturation voltage

VGE = 15 V, IC = 50 A, Tj = 25 °C

VGE = 15 V, IC = 50 A, Tj = 125 °C

Zero gate voltage collector current

VCE = 600 V, VGE = 0 V, Tj = 25 °C

Gate-emitter leakage current

VGE = 25 V, VCE = 0 V

VGE(th)

4.5

5.5

VCE(sat)

-

2.1

-

2.2

ICES

-

-

IGES

-

-

V

6.5

2.7

2.8

mA

1.5

nA

100

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 50 A

10

-

-

Input capacitance

Ciss

nF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

2.8

-

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.3

-

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.2

-

Semiconductor Group

2

Jan-10-1997

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