C67070-A2515-A67 データシートの表示（PDF） - Siemens AG

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C67070-A2515-A67

IGBT Power Module

Siemens AG 

BSM50GD60DN2E3226

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

ns

VCC = 300 V, VGE = 15 V, IC = 50 A

RGon = 22 Ω

-

60

-

Rise time

tr

VCC = 300 V, VGE = 15 V, IC = 50 A

RGon = 22 Ω

-

80

-

Turn-off delay time

td(off)

VCC = 300 V, VGE = -15 V, IC = 50 A

RGoff = 22 Ω

-

330

-

Fall time

tf

VCC = 300 V, VGE = -15 V, IC = 50 A

RGoff = 22 Ω

-

550

-

Free-Wheel Diode

Diode forward voltage

IF = 50 A, VGE = 0 V, Tj = 25 °C

IF = 50 A, VGE = 0 V, Tj = 125 °C

Reverse recovery time

IF = 50 A, VR = -300 V, VGE = 0 V

diF/dt = -500 A/µs, Tj = 125 °C

Reverse recovery charge

IF = 50 A, VR = -300 V, VGE = 0 V

diF/dt = -500 A/µs

Tj = 25 °C

Tj = 125 °C

VF

-

-

trr

-

Qrr

-

-

V

2

-

1.8

-

µs

0.2

-

µC

2.8

-

5

-

Semiconductor Group

3

Jan-10-1997

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