BSM50GD60DN2E3226 データシートの表示（PDF） - Siemens AG

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BSM50GD60DN2E3226

IGBT Power Module

Siemens AG 

BSM50GD60DN2E3226

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 50 A

20

V

VGE 16

14

100 V

300 V

12

10

8

6

4

2

0

0 20 40 60 80 100 120

160

QGate

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = 15 V

2.5

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

10 1

nF

C

10 0

Ciss

10 -1

Coss

Crss

10 -2

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH

12

ICpuls/IC

1.5

1.0

0.5

ICsc/IC

8

6

4

2

0.0

0

100 200 300 400 500 600

V 800

VCE

0

0 100 200 300 400 500 600 V 800

VCE

Semiconductor Group

6

Jan-10-1997

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