BSM50GD60DN2E3226 データシートの表示（PDF） - Siemens AG
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BSM50GD60DN2E3226 Datasheet PDF : 9 Pages
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BSM50GD60DN2E3226
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 22 Ω
10 3
tf
t
ns
tdoff
tr
10 2
tdon
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 50 A
10 3
tdoff
tf
t
ns
tr
tdon
10 2
10 1
0
20 40 60 80 100 A 140
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 22 Ω
10
Eoff
mWs
E
8
7
6
5
Eon
4
3
2
1
0
0 20 40 60 80 100 A 140
IC
10 1
0
20
40
60
80
Ω 120
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 50 A
10
mWs
E
8
7
6
Eoff
5
Eon
4
3
2
1
0
0
20
40
60
80
Ω 120
RG
Semiconductor Group
7
Jan-10-1997
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