Q67000-S279 データシートの表示（PDF） - Siemens AG
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Q67000-S279 Datasheet PDF : 5 Pages
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IGBT Transistor
BSP 280
Preliminary Data
q VCE 1000 V
q I C 2.5 A
q N channel
q MOS input (voltage-controlled)
q High switch speed
q Very low tail current
q Latch-up free
q Suitable freewheeling diode BAX 280
Type
Ordering Code Tape and Reel
Information
BSP 280 Q67000-S279 E6327: 1000 pcs/reel
Pin Configuration
1234
GCE C
Marking
BSP 280
Package
SOT-223
Maximum Ratings
Parameter
Symbol Values
Unit
Continuous collector current
IC
Soldering point,
TS = 25 ˚C
TS = 80 ˚C
Continuous collector current ambient, TA = 80 ˚C IC
Pulsed collector current
Soldering point,
TS = 80 ˚C
IC puls
Collector-emitter voltage
VCE
Gate-emitter voltage
VGE
Power dissipation
Ptot
Soldering point,
TS = 80 ˚C
Ambient
TA = 25 ˚C
Operating and storage temperature range
Tj, Tstg
Thermal resistance 1)
chip-ambient
chip-soldering point
RthJA
RthJS
DIN humidity category, DIN 40 040
–
A
2.5
1.5
0.5
3.0
1000
V
± 20
W
10
1.8
– 40 … + 150
˚C
70
K/W
6
E
–
IEC climatic category, DIN IEC 68-1
–
40/150/56
IGBT = Insulated Gate Bipolar Transistor
1) Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
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