BSP280E6327 データシートの表示（PDF） - Siemens AG

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BSP280E6327

IGBT Transistor

Siemens AG 

BSP 280

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified.

Parameter

Symbol

min.

Values

Unit

typ.

max.

Static Characteristics

Collector-emitter breakdown voltage

VGE = 0, IC = 0.1 mA

Gate threshold voltage

VGE = VCE, IC = 0.1 mA

Collector-emitter saturation voltage

VGE = 15 V, IC = 0.5 A

Tj = 25 ˚C

Tj = 125 ˚C

Tj = 150 ˚C

VGE = 15 V, IC = 1.5 A

Tj = 25 ˚C

Tj = 125 ˚C

Tj = 150 ˚C

Zero gate voltage collector current

VCE = 1000 V, VGE = 0

Tj = 25 ˚C

Tj = 125 ˚C

Gate-emitter leakage current

VGE = 20 V, VCE = 0

V(BR)CES

1000 –

VGE(th)

4.5

5.5

VCE(sat)

–

1.8

–

2.1

–

2.2

–

2.8

–

3.8

–

4.0

ICES

–

1

–

–

IGES

–

0.1

V

–

6.5

–

–

3.0

3.3

4.3

4.5

µA

25

100

nA

100

Dynamic Characteristics

Forward transconductance

VCE = 20 V, IC = 1.5 A

gfs

S

–

0.6

–

Input capacitance

VCE = 0, VGE = 25 V, f = 1 MHz

Ciss

pF

–

225

–

Output capacitance

VCE = 0, VGE = 25 V, f = 1 MHz

Coss

–

25

–

Reverse transfer capacitance

VCE = 0, VGE = 25 V, f = 1 MHz

Crss

–

13

–

Turn-on delay time

td(on)

ns

VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A

–

20

–

Rise time

tr

VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A

–

15

–

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